7.7 High Efficiency Crystalline Silicon Solar Cell - OECO Battery

The OECO battery is an abbreviation for Obliquely evaporated contact (OECO) silicon solar cell.

The OECO solar cell is a new monocrystalline silicon cell developed by the ISFH Institute in Germany since the 1990s. Compared with other high-efficiency batteries, it has the advantages of novel structure design, simple production, no loss of electrode raw materials, low cost, and suitability for mass production. The OECO battery structure is based on a metal-insulator-semiconductor (MIS) contact and utilizes the masking of the surface trench topography to obliquely deposit low-cost Al as an electrode on an extremely thin oxide tunneling layer without lithography, electrode burn-through, electrode underneath Heavy doping and high-temperature processes can form high-quality contacts, and large-scale battery electrodes can be vapor-deposited at one time. More importantly, when the battery production area is increased from 4 cm2 to 100 cm2, the efficiency is only slightly reduced from 21.1% to 20%, which still belongs to the high-efficiency range. Therefore, this type of battery is more suitable for process production.

OECO batteries have the following features:

(1) The electrode is vapor-deposited on the side of the trench, which is beneficial to increase the short-circuit current;

(2) Excellent MIS structure design can obtain high open circuit voltage and fill factor;

(3) High-quality evaporation electrode contact;

(4) Light emitters that can be optimized without being limited by contact characteristics;

(5) High-quality low-temperature surface passivation.

The specific process of making a battery is:

Mechanical grooving of the front surface → Chemical etching → Back masking (diffusion) → Chemical sizing on the front surface → Phosphorous diffusion using the liquid source POCl3 Preparation of the n+ emitter → Opening the back contact → Vacuum evaporation of Al as the back electrode → Front surface low temperature heat Oxidation to form an oxidized tunneling layer → Front surface without masking Direct tilted vapor deposition of Al as a surface electrode → Conductive adhesive is used to connect each surface electrode → Silicon nitride is deposited on the front surface by PECVD as a passivation and anti-reflection layer.

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