American scientists announced in the recently published "Nature Nanotechnology" magazine that they intend to use vacuum instead of silicon electronic equipment as an electronic transmission medium. The new vacuum tube thus developed is expected to break through the barriers of Moore's Law and completely change the face of electronics.
Scientists developed semiconductor transistors in 1947 to replace bulky and inefficient vacuum tubes. Since then, scientists have been continuously developing faster and more efficient semiconductors to produce electronic devices with better performance. Moore's Law states that when the price does not change, the number of transistors that can be accommodated on an integrated circuit will double approximately every 18 months, and the performance will also double. New research lead researcher Jin Honggu of the University of Pittsburgh's Institute of Nanoscience and Engineering said: "The size limitations of transistors make it very difficult for scientists to develop better-performing electronic devices. We hope that by studying transistors and their predecessors - vacuum tubes. To change this situation."
Jin Honggu explained that the limit speed of a transistor is determined by the “electronic transfer time†(the time it takes for one electron to travel from one device to another). However, electrons traveling within semiconductor devices often encounter obstacles and scattering in solid media. Jin Honggu said: "Thus, the best way to avoid this kind of scattering or collision may be to not use media at all and let electrons travel in the air within the vacuum or nano-scale space."
However, traditional vacuum electronic devices require high voltages and are incompatible with many application devices. Therefore, Jin Honggu’s research team decided to redesign the structure of vacuum electronic devices. Eventually, they discovered that when electrons are trapped in a semiconductor with an oxide or metal at an interface, they are easily drawn into the air. The electrons trapped at the interface form a layer of charge, and the electrons inside the layer Coulomb repulsion between charged particles also makes electrons easily released from silicon. They can effectively extract electrons from the silicon structure by applying a very small amount of voltage, and then place the electrons in the air so that they can travel within the nanometer-sized channel without encountering any collision or occurrence. scattering.
Jin Honggu said: "Accordingly, we can develop a new type of low-power, high-speed vacuum transistor, and it can also be compatible with the current silicon electronic devices, in addition can also improve the existing electronic by adding new features The function of the device. The latest discovery is expected to make the vacuum transistor 'the return of the king', but it uses a completely different approach." (Liu Xia)
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